High Power RF & Microwave Flange Attenuators
General Specifications
§ Standard Attenuation Values: 1 – 30dB
§ Frequency: DC – 4 GHz
§ Substrate Material: BeO (Beryllium Oxide), AlN (Aluminum Nitride)
§ Resistive Film: Thick Film
§ Power: 10 – 100 W CW
Lead-Free, RoHS certified
If you don’t see what you’re looking for, please email us at alen@electro-photonics.com and we may be able to help you.
| Product Image | EP Part Number | Frequency (GHz) | Power (W) | VSWR (max) | Dimensions [Inch] | Dimensions [mm] | Datasheet | Substrate Material |
|---|---|---|---|---|---|---|---|---|
| EPFA-300-B10-XXX | 4 | 10 | 1.25 | 0.300 x 0.200 x 0.146 | 7.62 x 5.08 x 3.7 | | BeO (Beryllium Oxide) |
| EPFA-516-B20-XXX | 3 | 20 | 1.25 | 0.516 x 0.250 x 0.157 | 13.1 x 6.35 x 4.0 | | BeO (Beryllium Oxide) |
| EPFA-516-B50-XXX | 3 | 50 | 1.25 | 0.516 x 0.250 x 0.153 | 13.1 x 6.35 x 3.9 | | BeO (Beryllium Oxide) |
| EPFA-800-B50-XXX | 3 | 50 | 1.25 | 0.800 x 0.230 x 0.101 | 20.32 x 5.84 x 2.58 | | BeO (Beryllium Oxide) |
| EPFA-800-B100-XXX | 3 | 100 | 1.2 | 0.800 x 0.230 x 0.152 | 20.32 x 5.84 x 3.8 | | BeO (Beryllium Oxide) |
| EPFA-516-N50-XXX | 3 | 50 | 1.25 | 0.516 x 0.250 x 0.101 | 13.1 x 6.35 x 2.57 | | AlN (Aluminum Nitride) |
| EPFA-800-N100-XXX | 3 | 100 | 1.2 | 0.800 x 0.230 x 0.101 | 20.32 x 5.84 x 2.58 | | AlN (Aluminum Nitride) |
