High Power RF & Microwave Chip Attenuators
General Specifications
§ Standard Attenuation Values: 1 – 30 dB
§ Frequency: DC – 3.5 GHz
§ Substrate Material: BeO (Beryllium Oxide), AlN (Aluminum Nitride), and Alumina
§ Resistive Film: Thick Film
§Terminals: PtAg and Tin over Nickel
Lead-Free, RoHS compliant
If you don’t see what you’re looking for, please email us at alen@electro-photonics.com and we may be able to help you.
| Product Image | EP Part Number | Frequency (GHz) | Power (W) | VSWR (max) | Dimensions [inch] | Dimensions [mm] | Datasheet | Substrate Material |
|---|---|---|---|---|---|---|---|---|
| CAB-50-XX | 3 | 50 | 1.25 | 0.350 x 0.230 x 0.040 | 8.89 x 5.84 x 1.0 | | BeO (Beryllium Oxide) |
| CAB-10-XX | 3.5 | 10 | 1.25 | 0.250 x 0.250 x 0.025 | 6.35 x 6.35 x 0.635 | | BeO (Beryllium Oxide) |
| CAN-100-XX | 3 | 100 | 1.2 | 0.350 x 0.225 x 0.040 | 8.89 x 5.71 x 1.0 | | AlN (Aluminum Nitride) |
| CAN-200-XX | 2.2 | 200 | 1.2 | 0.374 x 0.374 x 0.040 | 9.50 x 9.50 x 1.00 | | AlN (Aluminum Nitride) |
| CAN-10-XX | 3.5 | 10 | 1.25 | 0.250 x 0.250 x 0.025 | 6.35 x 6.35 x 0.635 | | AlN (Aluminum Nitride) |
| CAA-3-XX | 2 | 3 | 1.2 | 0.250 x 0.250 x 0.025 | 6.35 x 6.35 x 0.635 | | Alumina |
