High Power RF & Microwave Chip Resistors
General Specifications
§ Standard Resistance: 50 and 100 Ohms, ± 5%
§ Frequency: DC – 4 GHz
§ Substrate Material: BeO (Beryllium Oxide) and AlN (Aluminum Nitride)
§ Resistive Film: Thick Film
§Terminals: PtAg and Tin over Nickel
Lead-Free, RoHS compliant
If you don’t see what you’re looking for, please email us at alen@electro-photonics.com and we may be able to help you.
| Product Image | Part Number | Frequency (GHz) | Power (W) | Standard Resistance (Ω) ± 5% | Capacitance (pF) | Dimensions inch | Dimensions [mm] | Datasheet | Substrate Material |
|---|---|---|---|---|---|---|---|---|---|
| CRB-20-XXX | 4 | 20 | 50 and 100 | 0.75 | 0.200 x 0.100 x 0.039 | 5.08 x 2.54 x 1.00 | | BeO (Beryllium Oxide) |
| CRB-20-XXX-R | 4 | 20 | 50 and 100 | 0.75 | 0.200 x 0.100 x 0.039 | 5.08 x 2.54 x 1.00 | | BeO (Beryllium Oxide) |
| CRB-20-XXX-G | 4 | 20 | 50 and 100 | 0.75 | 0.200 x 0.100 x 0.039 | 5.08 x 2.54 x 1.00 | | BeO (Beryllium Oxide) |
| CRN-10-XXX | 4 | 10 | 50 and 100 | 0.75 | 0.200 x 0.100 x 0.039 | 5.08 x 2.54 x 1.00 | | AlN (Aluminum Nitride) |
