High Power RF & Microwave Flange Terminations

General Specifications

§ Standard Resistance: 50 Ohms ± 5%

§ Frequency: DC – 15 GHz

§ Substrate Material: BeO (Beryllium Oxide), AlN (Aluminum Nitride)

§ Resistive Film: Thick Film

§ Power: 10 – 1650 W CW

Lead-Free, RoHS certified

If you don’t see what you’re looking for, please email us at alen@electro-photonics.com and we may be able to help you.

EP Part Number	Frequency (GHz)	Power (W)	VSWR (max)	Resistance (Ω) ± 5%	Dimensions inch	Dimensions [mm]	Substrate Material
EPFT-300-N10-50-5	15	10	1.35	50	0.300 x 0.200 x 0.102	7.62 x 5.08 x 2.60	AlN (Aluminum Nitride)
EPFT-516-N40-50-5	9	40	1.25	50	0.516 x 0.250 x 0.087	13.1 x 6.35 x 2.20	AlN (Aluminum Nitride)
EPFT-516-N80-50-5	6	80	1.2	50	0.516 x 0.250 x 0.101	13.1 x 6.35 x 2.57	AlN (Aluminum Nitride)
EPFT-516-N100-50-5	5	100	1.2	50	0.516 x 0.250 x 0.150	13.1 x 6.35 x 3.80	AlN (Aluminum Nitride)
EPFT-975-B250-50-5	4	250	1.2	50	0.975 x 0.375 x 0.193	24.77 x 9.53 x 4.92	BeO (Beryllium Oxide)
EPFT-1250-B500-50-5	4	500	1.2	50	1.250 x 0.500 x 0.236	31.75 x 12.70 x 6.00	BeO (Beryllium Oxide)
EPFT-870-N150-50-5	4	150	1.2	50	0.870 x 0.375 x 0.121	22.1 x 9.53 x 3.07	AlN (Aluminum Nitride)
EPFT-975-BHT250-50-5	3	250	1.25	50	0.975 x 0.375 x 0.194	24.77 x 9.53 x 4.92	BeO (Beryllium Oxide)
EPFT-1900-BE1000-50-5	2.4 -2.5	1000	1.15	50	1.898 x 1.040 x 0.295	48.20 x 26.40 x 7.5	BeO (Beryllium Oxide)
EPFT-1900-B1650-50-5	1.5	1650	1.3	50	1.897 x 1.260 x 0.398	48.20 x 32.00 10.10	BeO (Beryllium Oxide)
EPFT-1250-N400-50-5	1	400	1.1	50	1.250 x 0.500 x 0.228	31.75 x 12.70 x 5.80	AlN (Aluminum Nitride)
EPFT-1900-N800-50-5	1	800	1.25	50	1.898 x 1.040 x 0.378	48.20 x 26.40 x 9.60	AlN (Aluminum Nitride)
EPFT-1900-N1000-50-5	1	1000	1.1	50	1.898 x 1.040 x 0.421	48.20 x 26.4 x 10.70	AlN (Aluminum Nitride)